1. (Invited) Flexible Memory Applications Using Oxide Semiconductor Thin-Film Transistors. (18th August 2016) Authors: Yoon, Sung-Min; Kim, So-Jung; Park, Min-Ji; Yun, Da-Jeong Journal: ECS transactions Issue: Volume 75:Number 10(2016) Page Start: 227 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 42‐1: A Promising Strategy of Low‐Power Circuit Design for Integrated Display Driver Using Charge‐Trap Memory and Oxide Thin Film Transistors. Issue 1 (30th May 2018) Authors: Byun, Chun-Won; Kim, Yeo-Myeong; Yu, Byung-Chang; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, So-Jung; Lee, Seung-Hyuck; Lee, Seung-Woo; Cho, Nam Sung; Lee, Jeong-IK; Yoon, Sung-Min Journal: Digest of technical papers Issue: Volume 49:Issue 1(2018) Page Start: 528 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Advanced Electromaterials: New Challenges. Issue 20 (17th October 2022) Authors: Lee, Jae Shin; Yoon, Sung-Min Other Names: Lee Jae Shin guestEditor.; Yoon Sung‐Min guestEditor. Journal: Physica status solidi Issue: Volume 219:Issue 20(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Ash characteristics of oxy-biomass combustion in a circulating fluidized bed with kaolin addition. (1st September 2021) Authors: Nguyen, Hoang Khoi; Moon, Ji Hong; Jo, Sung Ho; Park, Sung Jin; Bae, Dal Hee; Seo, Myung Won; Ra, Ho Won; Yoon, Sang-Jun; Yoon, Sung-Min; Lee, Jae Goo; Mun, Tae-Young; Song, Byungho Journal: Energy Issue: Volume 230(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Carbon dioxide purity and combustion characteristics of oxy firing compared to air firing in a pilot-scale circulating fluidized bed. (1st January 2019) Authors: Moon, Ji-Hong; Jo, Sung-Ho; Park, Sung Jin; Khoi, Nguyen Hoang; Seo, Myung Won; Ra, Ho Won; Yoon, Sang-Jun; Yoon, Sung-Min; Lee, Jae-Goo; Mun, Tae-Young Journal: Energy Issue: Volume 166(2019) Page Start: 183 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition. Issue 20 (2nd May 2019) Authors: Ko, Seung-Bo; Seong, Nak-Jin; Choi, Kyujeong; Yoon, So-Jung; Choi, Se-Na; Yoon, Sung-Min Journal: Journal of materials chemistry Issue: Volume 7:Issue 20(2019) Page Start: 6059 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses. (3rd July 2019) Authors: Na, So-Yeong; Yoon, So-Jung; Kang, Seung-Youl; Moon, Seung-Eon; Yoon, Sung-Min Journal: Japanese journal of applied physics Issue: Volume 58:Number 7(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Characterization on the operation stability of mechanically flexible memory thin-film transistors using engineered ZnO charge-trap layers. (7th June 2019) Authors: Kim, Hyeong-Rae; Kang, Chung-Seock; Kim, Sang-Kyun; Byun, Chun-Won; Yoon, Sung-Min Journal: Journal of physics Issue: Volume 52:Number 32(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term stability of thin film transistors. Issue 14 (15th July 2022) Authors: Moon, Seo-Hyun; Bae, Soo-Hyun; Kwon, Young-Ha; Seong, Nak-Jin; Choi, Kyu-Jeong; Yoon, Sung-Min Journal: Ceramics international Issue: Volume 48:Issue 14(2022) Page Start: 20905 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO2 Gate Insulator Deposited with H2O Oxygen Precursor during Atomic Layer Deposition Process. Issue 10 (14th April 2021) Authors: Kim, Jin-Ju; Yoon, So-Jung; Kim, Yeriaron; Moon, Seung-Eon; Yoon, Sung-Min Journal: Physica status solidi Issue: Volume 218:Issue 10(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗