1. Performance enhancement of the dual-metal gate In0.53Ga0.47As dopingless TFET by using a platinum metal strip insertion. (9th September 2019) Authors: Liu, Hu; Yang, Lin-An; Chen, Yao; Jin, Zhi; Hao, Yue Journal: Japanese journal of applied physics Issue: Volume 58:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Theoretical Modeling of Triple‐Barrier Resonant‐Tunneling Diodes Based on AlGaN/GaN Heterostructures. Issue 23 (21st October 2019) Authors: Rong, Taotao; Yang, Lin-An; Zhao, Ziyue; Zhang, Kai; Hao, Yue Journal: Physica status solidi Issue: Volume 216:Issue 23(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗