1. An In0.53Ga0.47As/In0.52Al0.48As/In0.53Ga0.47As double hetero-junction junctionless TFET. (10th June 2021) Authors: Liu, Hu; Yang, Lin-An; Zhang, Huawei; Zhang, Bingtao; Zhang, Wenting Journal: Japanese journal of applied physics Issue: Volume 60:Number 7(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects. (4th December 2020) Authors: Zhang, Xiao-Yu; Yang, Lin-An; Yang, Wen-lu; Li, Yang; Ma, Xiao-Hua; Hao, Yue Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier. (27th November 2020) Authors: Yang, Wen-Lu; Yang, Lin-An; Zhang, Xiao-Yu; Li, Yang; Ma, Xiao-Hua; Hao, Yue Journal: Semiconductor science and technology Issue: Volume 36:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Noise characteristics of Ni/GaN Schottky barrier IMPATT diode based on polar- and nonpolar-oriented wurtzite GaN for terahertz application. (March 2020) Authors: Zhang, Xiao-Yu; Yang, Lin-An; Ma, Yao; Liu, Yu-Chen; Yang, Wen-Lu; Ma, Xiao-Hua; Hao, Yue Journal: Superlattices and microstructures Issue: Volume 139(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Performance enhancement of the dual-metal gate In0.53Ga0.47As dopingless TFET by using a platinum metal strip insertion. (9th September 2019) Authors: Liu, Hu; Yang, Lin-An; Chen, Yao; Jin, Zhi; Hao, Yue Journal: Japanese journal of applied physics Issue: Volume 58:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Room temperature asymmetric negative differential resistance characteristics of AlGaN/GaN resonant tunneling diodes grown by metal-organic chemical vapor deposition. (January 2022) Authors: Yang, Wen-Lu; Yang, Lin-An; Zhang, Xiao-Yu; Li, Yang; Ma, Xiao-Hua; Hao, Yue Journal: Solid-state electronics Issue: Volume 187(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Terahertz monolithic integrated narrow-band filter based on the silicon carbide substrate. (1st March 2023) Authors: Liu, Yuchen; Yang, Lin-An; Li, Yang; Liu, Siyu; Chen, Yao; Zhang, Xiaoyu; Ma, Xiaohua; Hao, Yue Journal: Semiconductor science and technology Issue: Volume 38:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. The dual-suppression of peak electric field in AlGaN/GaN HEMT with sandwich structure. (April 2021) Authors: Zou, Hao; Yang, Lin-An; Ma, Xiao-Hua; Hao, Yue Journal: Superlattices and microstructures Issue: Volume 152(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Theoretical Modeling of Triple‐Barrier Resonant‐Tunneling Diodes Based on AlGaN/GaN Heterostructures. Issue 23 (21st October 2019) Authors: Rong, Taotao; Yang, Lin-An; Zhao, Ziyue; Zhang, Kai; Hao, Yue Journal: Physica status solidi Issue: Volume 216:Issue 23(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗