1. A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO2‐Based Ferroelectric Memory. Issue 5 (5th February 2020) Authors: Zhang, Wanli; Li, Gang; Long, Xiaojiang; Cui, Lian; Tang, Minghua; Xiao, Yongguang; Yan, Shaoan; Li, Yadong; Zhao, Wenxi Journal: Physica status solidi Issue: Volume 257:Issue 5(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Coexistence of ferroelectricity and metallicity in M-doped BaTiO3 (M = Al, V, Cr, Fe, Ni, and Nb): First-principles study. (June 2021) Authors: Li, Gang; He, Chen; Xiong, Ying; Zou, Zhi; Liu, Yulin; Chen, Qilai; Zhang, Wanli; Yan, Shaoan; Xiao, Yongguang; Tang, Minghua; Li, Zheng Journal: Materials today communications Issue: Volume 27(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effect of film thickness and temperature on the resistive switching characteristics of the Pt/HfO2/Al2O3/TiN structure. (November 2020) Authors: Liu, Yulin; Ouyang, Sha; Yang, Jie; Tang, Minghua; Wang, Wei; Li, Gang; Zou, Zhi; Liang, Yifan; Li, Yucheng; Xiao, Yongguang; Yan, Shaoan; Chen, Qilai; Li, Zheng Journal: Solid-state electronics Issue: Volume 173(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Growth kinetics of the ferroelectric Al-doped HfO2 thin films via synergistic effect of various essential factors. Issue 4 (15th February 2021) Authors: Mao, Yanhu; Zhang, Wanli; Cui, Lian; Tang, Minghua; Su, Pengyu; Long, Xiaojiang; Li, Gang; Xiao, Yongguang; Yan, Shaoan Journal: Ceramics international Issue: Volume 47:Issue 4(2021) Page Start: 4674 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor. (1st March 2016) Authors: Yan, Shaoan; Li, Gang; Guo, Hongxia; Zhao, Wen; Xiong, Ying; Tang, Minghua; Li, Zheng; Xiao, Yongguang; Zhang, Wanli; Lei, Zhifeng Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Total ionizing dose effects on resistance stability of Pt/HfO2/Al2O3/TiN structure RRAM devices. (March 2020) Authors: Luo, Haipeng; Liang, Yifan; Tang, Minghua; Li, Gang; Xiong, Ying; Sun, Yunlong; Liu, Yulin; Ouyang, Sha; Xiao, Yongguang; Yan, Shaoan; Zhang, Wanli; Chen, Qilai; Li, Zheng Journal: Microelectronics and reliability Issue: Volume 106(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Two-dimensional polar metals in KNbO3/BaTiO3 superlattices: first-principle calculations. Issue 61 (1st November 2019) Authors: Li, Gang; Huang, Huiyu; Peng, Shaoqin; Xiong, Ying; Xiao, Yongguang; Yan, Shaoan; Cao, Yanwei; Tang, Minghua; Li, Zheng Journal: RSC advances Issue: Volume 9:Issue 61(2019) Page Start: 35499 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗