A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO2‐Based Ferroelectric Memory. Issue 5 (5th February 2020)

• Record Type: Journal Article
• Authors: Zhang, Wanli; Li, Gang; Long, Xiaojiang; Cui, Lian; Tang, Minghua; Xiao, Yongguang; Yan, Shaoan; Li, Yadong; Zhao, Wenxi
• Is Part Of: Physica status solidi. Volume 257:Issue 5(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-02-05
• Subjects: ferroelectric memories -- hafnium aluminum oxide -- hafnium zirconium oxide -- remnant polarization -- γ-ray radiation; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201900736
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : The γ‐ray total dose radiation effects on Zr‐doped HfO2 (HfZrO) and Al‐doped HfO2 (HfAlO) ferroelectric thin films are comparatively studied. The J – E, P – E, C – V, ε r – f curves and fatigue characteristics of both HfZrO and HfAlO thin films are measured and analyzed with the increasing total dose from 0 to 5 Mrad (Si). The remnant polarization ( P r ) values of both HfZrO and HfAlO thin films first decrease and then increase with the increasing total dose. A competitive mechanism between the pinned domains and increasing polarization switching charges induced by radiation is proposed to explain this phenomenon. This work presents doped HfO2 film with great radiation tolerance for nuclear and aerospace applications. Abstract : How does the γ‐ray radiation affect HfO2 ‐based ferroelectric thin films? A nonlinear relationship between the dose of radiation and remnant polarization of Zr‐doped and Al‐doped HfO2 ‐based thin films is reported herein. The combined effect of pinned domains and interface charges caused by radiation defects is used to explain the phenomenon.