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You searched for: Author/Creator Xue, Lu Journal Electronics lettersLimit your search
- Xue, Lu [remove] 1
- 621.381 1
- AlGaN‐GaN -- Si -- Al2O3 1
- Electronics -- Periodicals 1
- MOS‐HEMT -- high threshold voltage -- metal‐oxide‐semiconductor high electron mobility transistors -- fluorine‐based treatment technique -- gate dielectric -- atomic layer deposition -- large input voltage swing -- electromagnetic interference immunity -- MOS‐HEMT power switches -- current 5.3 A -- voltage 400 V -- size 20 nm -- voltage 3.5 V -- voltage 402 V -- AlGaN‐GaN -- Si -- Al2O3 1
- alumina -- aluminium compounds -- atomic layer deposition -- dielectric materials -- electromagnetic interference -- elemental semiconductors -- field effect transistor switches -- gallium compounds -- high electron mobility transistors -- III‐V semiconductors -- MOSFET -- power semiconductor switches -- silicon -- wide band gap semiconductors 1
- current -- size -- voltage -- voltage -- voltage 1