Author/Creator: Xu, Xinbing - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Xu, Xinbing

1. A High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain. (1st August 2022)

Authors:: Xing, Pengcheng; Wang, Fangzhou; Luo, Pan; Sun, Ruize; Shi, Yijun; Xu, Xinbing; Chen, Yiqiang; Chen, Wanjun
Journal:: ECS journal of solid state science and technology
Issue:: Volume 11:Number 8(2022)
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Record Type:: Journal Article
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2. Degradation assessment of 1.2-kV SiC MOSFETs and comparative study with 1.2-kV Si IGBTs under power cycling. (May 2022)

Authors:: Chen, Yuan; Huang, Hong-Zhong; Rao, Yunliang; He, Zhiyuan; Lai, Ping; Chen, Yiqiang; Xu, Xinbing; Liu, Chang
Journal:: Microelectronics and reliability
Issue:: Volume 132(2022)
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Record Type:: Journal Article
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3. Degradation mechanism analysis for SiC power MOSFETs under repetitive power cycling stress. (30th November 2021)

Authors:: Rao, Yunliang; Chen, Yuan; He, Zhiyuan; Chen, Yiqiang; Liu, Chang; Xu, Xinbing; Liu, Yang; Lu, Guoguang
Journal:: Journal of physics
Issue:: Volume 55:Number 9(2022)
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Record Type:: Journal Article
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