1. A fast fault injection platform of multiple SEUs for SRAM-based FPGAs. (March 2018) Authors: Zhang, Rongsheng; Xiao, Liyi; Li, Jie; Cao, Xuebing; Qi, Chunhua; Li, Jiaqiang; Wang, Mingjiang Journal: Microelectronics and reliability Issue: Volume 82(2018) Page Start: 147 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A method to recover critical bits under a double error in SEC-DED protected memories. (June 2017) Authors: Liu, Shanshan; Reviriego, Pedro; Xiao, Liyi; Maestro, Juan Antonio Journal: Microelectronics and reliability Issue: Volume 73(2017) Page Start: 92 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Bias dependence of synergistic radiation effects induced by electrons and protons on silicon bipolar junction transistors. (June 2015) Authors: Liu, Chaoming; Li, Xingji; Yang, Jianqun; Ma, Guoliang; Xiao, Liyi Journal: Radiation physics and chemistry Issue: Volume 111(2015:Jun.) Page Start: 36 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Comments on "Extend orthogonal Latin square codes for 32-bit data protection in memory applications" Microelectron. Reliab. 63, 278–283 (2016). (February 2017) Authors: Liu, Shanshan; Reviriego, Pedro; Sánchez-Macián, Alfonso; Maestro, Juan Antonio; Xiao, Liyi Journal: Microelectronics and reliability Issue: Volume 69(2017) Page Start: 126 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effects of proton radiation on the InGaAs component cells of inverted metamorphic four-junction solar cells. (1st August 2023) Authors: Zhou, Jiaming; Zhang, Yanqing; Liu, Chaoming; Jiang, Yinan; Zhou, Bo; Qi, Chunhua; Wang, Tianqi; Ma, Guoliang; Xiao, Liyi; Huo, Mingxue Journal: Materials science in semiconductor processing Issue: Volume 162(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Efficient implementation of single event upset tolerant register comparison. Issue 23 (1st November 2016) Authors: Reviriego, Pedro; Liu, Shanshan; Xiao, Liyi; Maestro, Juan Antonio Journal: Electronics letters Issue: Volume 52:Issue 23(2016) Page Start: 1922 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells. Issue 6 (21st January 2022) Authors: Zhang, Yanqing; Zhou, Jiaming; Liu, Chaoming; Qi, Chunhua; Wang, Tianqi; Ma, Guoliang; Zhou, Bin; Xiao, Liyi; Huo, Mingxue Journal: Physica status solidi Issue: Volume 219:Issue 6(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Extend orthogonal Latin square codes for 32-bit data protection in memory applications. (August 2016) Authors: Liu, Shanshan; Xiao, Liyi; Mao, Zhigang Journal: Microelectronics and reliability Issue: Volume 63(2016) Page Start: 278 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Extend orthogonal Latin square codes for 32-bit data protection in memory applications. (August 2016) Authors: Liu, Shanshan; Xiao, Liyi; Mao, Zhigang Journal: Microelectronics and reliability Issue: Volume 63(2016) Page Start: 278 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Fault tolerant encoders for Single Error Correction and Double Adjacent Error Correction codes. (February 2018) Authors: Liu, Shanshan; Reviriego, Pedro; Maestro, Juan Antonio; Xiao, Liyi Journal: Microelectronics and reliability Issue: Volume 81(2018) Page Start: 167 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗