1. The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage. (7th March 2023) Authors: Zhao, Zihui; Dai, Yijun; Meng, Fanping; Chen, Li; Liu, Kunzi; Luo, Tian; Yu, Zhehan; Wang, Qikun; Yang, Zhenhai; Zhang, Jijun; Guo, Wei; Wu, Liang; Ye, Jichun Journal: Applied physics express Issue: Volume 16:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗