1. Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric. (9th March 2016) Authors: Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures. (April 2016) Authors: Huang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen-Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi Journal: Materials science in semiconductor processing Issue: Volume 45(2016:Apr.) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Large Gate Swing and High Threshold Voltage Enhancement-Mode AlGaN/GaN HEMTs Using Low Energy Fluorine Ion Implantation in GaN Layer. (13th April 2015) Authors: Wu, Chia-Hsun; Han, Ping-Cheng; Chang, Edward Yi Journal: ECS transactions Issue: Volume 66:Number 1(2015) Page Start: 201 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗