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Author/Creator Wichmann, Nicolas

1. 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications. (23rd February 2014)

Authors:
Gardès, Cyrille; Bagumako, Sonia; Desplanque, Ludovic; Wichmann, Nicolas; Bollaert, Sylvain; Danneville, François; Wallart, Xavier; Roelens, Yannick
Other Names:
Lin Y.-S. Academic Editor.; Paris J. F. Academic Editor.; Park J.-H. Academic Editor.
Journal:
TheScientificWorldjournal
Issue:
Volume 2014(2014)
Page Start:
Record Type:
Journal Article
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2. Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy. (19th November 2018)

Authors:
Pastorek, Matej; Olivier, Aurélien; Lechaux, Yoann; Wichmann, Nicolas; Karatsori, Théano; Fahed, Maria; Bucamp, Alexandre; Addad, Ahmed; Troadec, David; Ghibaudo, Gérard; Desplanque, Ludovic; Wallart, Xavier; Bollaert, Sylvain
Journal:
Nanotechnology
Issue:
Volume 30:Number 3(2019)
Page Start:
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗