Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy. (19th November 2018)

• Record Type: Journal Article
• Authors: Pastorek, Matej; Olivier, Aurélien; Lechaux, Yoann; Wichmann, Nicolas; Karatsori, Théano; Fahed, Maria; Bucamp, Alexandre; Addad, Ahmed; Troadec, David; Ghibaudo, Gérard; Desplanque, Ludovic; Wallart, Xavier; Bollaert, Sylvain
• Is Part Of: Nanotechnology. Volume 30:Number 3(2019)
• Publication Date: 2018-11-19
• Subjects: MOSFET -- MBE -- epitaxy -- III–V -- InAs; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aaebbd
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: In this paper we report on the fabrication and electrical characterization of InAs-on-nothing metal-oxide-semiconductor field-effect transistor composed of a suspended InAs channel and raised InAs n+ contacts. This architecture is obtained using 3D selective and localized molecular beam epitaxy on a lattice mismatched InP substrate. The suspended InAs channel and InAs n+ contacts feature a reproducible and uniform shape with well-defined 3D sidewalls. Devices with 1 μ m gate length present a saturation drain current ( I Dsat ) of 300 mA mm −1 at V DS = 0.8 V and a trans-conductance ( GM ) of 120 mS mm −1 at V DS = 0.5 V. In terms of electrostatic control, the devices display a minimal subthreshold swing of 110 mV dec −1 at V DS = 0.5 V and a small drain induced barrier lowering of 50 mV V −1 .