1. (Invited) Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy. (8th September 2020) Authors: Nakashima, Hiroshi; Wen, Wei-Chen; Yamamoto, Keisuke; Wang, Dong Journal: ECS transactions Issue: Volume 98:Number 5(2020) Page Start: 395 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Keynote) Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy. (3rd July 2019) Authors: Nakashima, Hiroshi; Wen, Wei-Chen; Yamamoto, Keisuke; Wang, Dong Journal: ECS transactions Issue: Volume 92:Number 4(2019) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics. (1st August 2023) Authors: Wen, Wei-Chen; Wang, Dong; Nakashima, Hiroshi; Yamamoto, Keisuke Journal: Materials science in semiconductor processing Issue: Volume 162(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Heteroepitaxy of group IV materials for future device application. (1st April 2023) Authors: Yamamoto, Yuji; Wen, Wei-Chen; Tillack, Bernd Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. High Crystallinity Ge Growth on Si (111) and Si (110) by Using Reduced Pressure Chemical Vapor Deposition. (22nd February 2023) Authors: Yamamoto, Yuji; Wen, Wei-Chen; Schubert, Markus Andreas; Corley-Wiciak, Cedric; Tillack, Bernd Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 2(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack. (1st November 2017) Authors: Nagatomi, Yuta; Tateyama, Tomoki; Tanaka, Shintaro; Wen, Wei-Chen; Sakaguchi, Taisei; Yamamoto, Keisuke; Zhao, Liwei; Wang, Dong; Nakashima, Hiroshi Journal: Materials science in semiconductor processing Issue: Volume 70(2017) Page Start: 246 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Vertical alignment control of self-ordered multilayered Ge nanodots on SiGe. (1st April 2023) Authors: Wen, Wei-Chen; Schubert, Markus Andreas; Tillack, Bernd; Yamamoto, Yuji Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Vertical alignment control of self-ordered multilayered Ge nanodots on SiGe. (1st April 2023) Authors: Wen, Wei-Chen; Schubert, Markus Andreas; Tillack, Bernd; Yamamoto, Yuji Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗