1. Donor implanted back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems. (9th July 2021) Authors: Scharnetzky, J; Baumann, P; Reichl, C; Karl, H; Dietsche, W; Wegscheider, W Journal: Semiconductor science and technology Issue: Volume 36:Number 8(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Electron heating induced by an ac-bias current in the regime of Shubnikov–de Haas oscillation in the high mobility GaAs/AlxGa1−xAs two-dimensional electron system. (10th July 2018) Authors: Munasinghe, C Rasadi; Gunawardana, B; Samaraweera, R L; Wang, Z; Nanayakkara, T R; Kriisa, A; Reichl, C; Wegscheider, W; Mani, R G Journal: Journal of physics Issue: Volume 30:Number 31(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Mapping an electron wave function by a local electron scattering probe. (19th November 2015) Authors: Reichl, C; Dietsche, W; Tschirky, T; Hyart, T; Wegscheider, W Journal: New journal of physics Issue: Volume 17:Number 11(2015:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Stable branched electron flow. (11th July 2018) Authors: Braem, B A; Gold, C; Hennel, S; Röösli, M; Berl, M; Dietsche, W; Wegscheider, W; Ensslin, K; Ihn, T Journal: New journal of physics Issue: Volume 20:Number 7(2018:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells. (21st November 2016) Authors: Failla, M; Keller, J; Scalari, G; Maissen, C; Faist, J; Reichl, C; Wegscheider, W; Newell, O J; Leadley, D R; Myronov, M; Lloyd-Hughes, J Journal: New journal of physics Issue: Volume 18:Number 11(2016:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems. (9th July 2021) Authors: Külah, E; Reichl, C; Scharnetzky, J; Alt, L; Dietsche, W; Wegscheider, W Journal: Semiconductor science and technology Issue: Volume 36:Number 8(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗