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3. A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3‐Based Memory Cell. (14th June 2018)

4. Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM. Issue 23 (18th April 2017)

5. Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications1. Issue 7 (28th July 2014)

9. Avalanche‐Discharge‐Induced Electrical Forming in Tantalum Oxide‐Based Metal–Insulator–Metal Structures. (30th October 2015)