Author/Creator: Wang, Mu-Chun - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Wang, Mu-Chun

1. A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer. (December 2016)

Authors:: Liaw, Yue-Gie; Liao, Wen-Shiang; Wang, Mu-Chun; Lin, Cheng-Li; Zhou, Bin; Gu, Haoshuang; Li, Deshi; Zou, Xuecheng
Journal:: Solid-state electronics
Issue:: Volume 126(2016)
Page Start:: 46
Record Type:: Journal Article
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2. A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer. (December 2016)

Authors:: Liaw, Yue-Gie; Liao, Wen-Shiang; Wang, Mu-Chun; Lin, Cheng-Li; Zhou, Bin; Gu, Haoshuang; Li, Deshi; Zou, Xuecheng
Journal:: Solid-state electronics
Issue:: Volume 126(2016)
Page Start:: 46
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors. (17th March 2014)

Authors:: Wang, Mu-Chun; Wang, Shea-Jue; Huang, Heng-Sheng; Chen, Shuang-Yuan; Peng, Min-Ru; Ji, Liang-Ru; Lu, Ming-Feng; Liao, Wen-Shiang; Liu, Chuan-Hsi
Journal:: International journal of nanotechnology
Issue:: Volume 11:Number 1/2/3/4(2014)
Page Start:: 62
Record Type:: Journal Article
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4. Choosing Prior Hyperparameters: With Applications to Time-Varying Parameter Models. Issue 1 (2nd January 2020)

Authors:: Amir-Ahmadi, Pooyan; Matthes, Christian; Wang, Mu-Chun
Journal:: Journal of business & economic statistics
Issue:: Volume 38:Issue 1(2020)
Page Start:: 124
Record Type:: Journal Article
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5. Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment. (July 2018)

Authors:: Wang, Shea-Jue; Sung, Shun-Ping; Wang, Mu-Chun; Huang, Heng-Sheng; Chen, Shuang-Yuan; Fan, Shou-Kong
Journal:: Vacuum
Issue:: Volume 153(2018)
Page Start:: 117
Record Type:: Journal Article
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6. Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment. Issue 11 (November 2015)

Authors:: Wang, Shea-Jue; Wang, Mu-Chun; Chen, Shuang-Yuan; Lan, Wen-How; Yang, Bor-Wen; Huang, L.S.; Liu, Chuan-Hsi
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 11(2015)
Page Start:: 2203
Record Type:: Journal Article
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7. I-V model of nano nMOSFETs incorporating drift and diffusion current. (September 2018)

Authors:: Huang, Heng-Sheng; Wang, Wei-Lun; Wang, Mu-Chun; Chao, Yu-Hao; Wang, Shea-Jue; Chen, Shuang-Yuan
Journal:: Vacuum
Issue:: Volume 155(2018)
Page Start:: 76
Record Type:: Journal Article
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8. Nanomaterials and Nanodevices. (26th March 2015)

Authors:: Zhao, Xiao-Feng; Wang, Mu-Chun; Huang, Jen-Ching; Qiang, You; Yoon, In-Seok
Journal:: TheScientificWorldjournal
Issue:: Volume 2015(2015)
Page Start:
Record Type:: Journal Article
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9. Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers. (1st January 2014)

Authors:: Wang, Mu-Chun; Huang, Heng-Sheng; Peng, Min-Ru; Wang, Shea-Jue; Chen, Tsao-Yeh; Liao, Wen-Shiang; Yang, Hsin-Chia; Liu, Chuan-Hsi
Journal:: International journal of material & product technology
Issue:: Volume 49:Number 1(2014)
Page Start:: 25
Record Type:: Journal Article
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10. Thermal stress probing the channel-length modulation effect of nano n-type FinFETs. (April 2018)

Authors:: Tuan, Fu-Yuan; Chen, Chii-Wen; Wang, Mu-Chun; Liao, Wen-Shiang; Wang, Shea-Jue; Fan, Shou-Kong; Lan, Wen-How
Journal:: Microelectronics and reliability
Issue:: Volume 83(2018)
Page Start:: 260
Record Type:: Journal Article
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