Author/Creator: Wang, Chin-I - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Wang, Chin-I

1. Dielectric properties and reliability enhancement of atomic layer deposited thin films by in situ atomic layer substrate biasing. Issue 37 (7th September 2020)

Authors:: Chou, Chun-Yi; Chang, Teng-Jan; Wang, Chin-I; Wang, Chun-Yuan; Yin, Yu-Tung; Chung, Tsai-Fu; Yang, Jer-Ren; Lin, Hsin-Chih; Chen, Miin-Jang
Journal:: Journal of materials chemistry
Issue:: Volume 8:Issue 37(2020)
Page Start:: 13025
Record Type:: Journal Article
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2. Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2 thin films scaled down to 3 nm. Issue 37 (24th August 2021)

Authors:: Wang, Chin-I; Chen, Hsin-Yang; Wang, Chun-Yuan; Chang, Teng-Jan; Jiang, Yu-Sen; Chang, Chih-Sheng; Chen, Miin-Jang
Journal:: Journal of materials chemistry
Issue:: Volume 9:Issue 37(2021)
Page Start:: 12759
Record Type:: Journal Article
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3. Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors. Issue 15 (December 2022)

Authors:: Jiang, Yu-Sen; Huang, Kuei-Wen; Yi, Sheng-Han; Wang, Chin-I; Chang, Teng-Jan; Kao, Wei-Chung; Wang, Chun-Yuan; Yin, Yu-Tung; Shieh, Jay; Chen, Miin-Jang
Journal:: Journal of the European Ceramic Society
Issue:: Volume 42:Issue 15(2022)
Page Start:: 6997
Record Type:: Journal Article
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4. Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering. (October 2020)

Authors:: Wang, Chun-Yuan; Wang, Chin-I; Yi, Sheng-Han; Chang, Teng-Jan; Chou, Chun-Yi; Yin, Yu-Tung; Shiojiri, Makoto; Chen, Miin-Jang
Journal:: Materials & design
Issue:: Volume 195(2020)
Page Start:
Record Type:: Journal Article
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5. Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography. Issue 26 (17th June 2021)

Authors:: Chang, Teng-Jan; Wang, Ting-Yun; Wang, Chin-I; Huang, Zheng-da; Jiang, Yu-Sen; Chou, Chun-Yi; Kao, Wei-Chung; Chen, Miin-Jang
Journal:: Journal of materials chemistry
Issue:: Volume 9:Issue 26(2021)
Page Start:: 8285
Record Type:: Journal Article
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6. Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applications. (15th February 2018)

Authors:: Tsai, Meng-Chen; Wang, Chin-I; Chen, Yen-Chang; Chen, Yi-Ju; Li, Kai-Shin; Chen, Min-Cheng; Chen, Miin-Jang
Journal:: Semiconductor science and technology
Issue:: Volume 33:Number 3(2018:Mar.)
Page Start:
Record Type:: Journal Article
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7. Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction. (1st March 2023)

Authors:: Chang, Teng-Jan; Chen, Hsing-Yang; Wang, Chin-I; Lin, Hsin-Chih; Hsu, Chen-Feng; Wang, Jer-Fu; Nien, Chih-Hung; Chang, Chih-Sheng; Radu, Iuliana P.; Chen, Miin-Jang
Journal:: Acta materialia
Issue:: Volume 246(2023)
Page Start:
Record Type:: Journal Article
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