1. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode. (January 2019) Authors: Colón, Albert; Douglas, Erica A.; Pope, Andrew J.; Klein, Brianna A.; Stephenson, Chad A.; Van Heukelom, Michael S.; Tauke-Pedretti, Anna; Baca, Albert G. Journal: Solid-state electronics Issue: Volume 151(2019) Page Start: 47 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗