1. Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms. (19th February 2021) Authors: Achilli, Simona; Le, Nguyen H.; Fratesi, Guido; Manini, Nicola; Onida, Giovanni; Turchetti, Marco; Ferrari, Giorgio; Shinada, Takahiro; Tanii, Takashi; Prati, Enrico Journal: Advanced functional materials Issue: Volume 31:Number 21(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Single‐Ion Implantation: Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms (Adv. Funct. Mater. 21/2021). (24th May 2021) Authors: Achilli, Simona; Le, Nguyen H.; Fratesi, Guido; Manini, Nicola; Onida, Giovanni; Turchetti, Marco; Ferrari, Giorgio; Shinada, Takahiro; Tanii, Takashi; Prati, Enrico Journal: Advanced functional materials Issue: Volume 31:Number 21(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗