Single‐Ion Implantation: Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms (Adv. Funct. Mater. 21/2021). (24th May 2021)

• Record Type: Journal Article
• Authors: Achilli, Simona; Le, Nguyen H.; Fratesi, Guido; Manini, Nicola; Onida, Giovanni; Turchetti, Marco; Ferrari, Giorgio; Shinada, Takahiro; Tanii, Takashi; Prati, Enrico
• Is Part Of: Advanced functional materials. Volume 31:Number 21(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-05-24
• Subjects: Ge‐vacancy complex -- Hubbard model -- point defects -- quantum transport -- single‐ion implantation; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202170151
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number, 2011175, Simona Achilli, Enrico Prati, and co‐workers report on the controlled creation of individual vacancies in silicon by implanting Ge atoms via single ion implantation, the quantum transport model of a disordered 1D array of Ge‐V complexes, and its experimental characterization. Peculiar activation energies are found from cryogenic to room temperature. Image created using ArtBreeder AI agent.