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Author/Creator Tu, Yu-Fa

1. Abnormal threshold voltage shift caused by trapped holes under hot-carrier stress in a-IGZO TFTs. (13th December 2019)

Authors:
Shao, Jingjing; Su, Wan-Ching; Chang, Ting-Chang; Chen, Hong-Chih; Zhou, Kuan-Ju; Lu, I-Nien; Tu, Yu-Fa; Shih, Yu-Shan; Tsai, Tsung-Ming; Lien, Chen-Hsin; Yang, Jianwen; Zhang, Qun
Journal:
Journal of physics
Issue:
Volume 53:Number 8(2020)
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Record Type:
Journal Article
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2. Analysis of self-heating-related instability in n-channel low-temperature polysilicon TFTs with different S/D contact hole densities. (1st March 2022)

Authors:
Tu, Yu-Fa; Chang, Ting-Chang; Zhou, Kuan-Ju; Hung, Yang-Hao; Zheng, Yu-Zhe; Chen, Jian-Jie; Tai, Mao-Chou; Wang, Yu-Xuan; Hung, Wei-Chun; Hung, Wei-Chieh; Lien, Chen-Hsin
Journal:
Applied physics express
Issue:
Volume 15:Number 3(2022)
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Record Type:
Journal Article
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3. Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature. (5th November 2020)

Authors:
Sun, Li-Chuan; Lin, Chih-Yang; Chen, Po-Hsun; Tsai, Tsung-Ming; Zhou, Kuan-Ju; Tu, Yu-Fa; Huang, Wei-Chen; Tseng, Yi-Ting; Tan, Yung-Fang; Lin, Shih-Kai; Lin, Chun-Chu; Hung, Wei-Chun; Chang, Yen-Cheng; Chang, Ting-Chang
Journal:
Applied physics express
Issue:
Volume 13:Number 11(2020)
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Record Type:
Journal Article
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4. Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology. (30th June 2021)

Authors:
Wu, Pei-Yu; Chen, Min-Chen; Chang, Ting-Chang; Zheng, Hao-Xuan; Jin, Fu-Yuan; Tan, Yung-Fang; Tu, Yu-Fa; Tsai, Xin-Ying; Huang, Jen-Wei; Chang, Kuo-Jen; Liu, Guan-Shian; Tsai, Tsung-Ming
Journal:
Semiconductor science and technology
Issue:
Volume 36:Number 8(2021)
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Record Type:
Journal Article
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