1. Theoretical investigation of vacancy related defects at 4H-SiC(0001̅)/SiO2 interface after wet oxidation. (1st July 2022) Authors: Tsunasaki, Mukai; Ono, Tomoya; Uemoto, Mitsuharu Journal: Japanese journal of applied physics Issue: Volume 61:Number SH(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗