1. (Invited) Electrochemical Formation and Application of Porous Gallium Nitride. (20th July 2018) Authors: Sato, Taketomo; Toguchi, Masachika Journal: ECS transactions Issue: Volume 86:Number 1(2018) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Communication—Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect. Issue 12 (15th July 2019) Authors: Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo Journal: Journal of the Electrochemical Society Issue: Volume 166:Issue 12(2019) Page Start: H510 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Communication—Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect. Issue 12 (1st January 2019) Authors: Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo Journal: Journal of the Electrochemical Society Issue: Volume 166:Issue 12(2019) Page Start: H510 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Depth profiling of surface damage in n-type GaN induced by inductively coupled plasma reactive ion etching using photo-electrochemical techniques. (24th September 2020) Authors: Yamada, Shinji; Takeda, Kentaro; Toguchi, Masachika; Sakurai, Hideki; Nakamura, Toshiyuki; Suda, Jun; Kachi, Tetsu; Sato, Taketomo Journal: Applied physics express Issue: Volume 13:Number 10(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN. (8th November 2018) Authors: Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, Taketomo Journal: Japanese journal of applied physics Issue: Volume 57:Number 12(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82– ions. (31st May 2019) Authors: Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, Taketomo Journal: Applied physics express Issue: Volume 12:Number 6(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Fabrication of GaN nanowires containing n+-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment. (29th October 2021) Authors: Shimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika; Sato, Taketomo; Motohisa, Junichi Journal: Applied physics express Issue: Volume 14:Number 11(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source. (20th February 2019) Authors: Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo Journal: Applied physics express Issue: Volume 12:Number 3(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Thermal-assisted contactless photoelectrochemical etching for GaN. (18th March 2020) Authors: Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Ogami, Hiroki; Sato, Taketomo Journal: Applied physics express Issue: Volume 13:Number 4(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗