Communication—Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect. Issue 12 (1st January 2019)

• Record Type: Journal Article
• Authors: Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo
• Is Part Of: Journal of the Electrochemical Society. Volume 166:Issue 12(2019)
• Page Start: H510
• Page End: H512
• Publication Date: 2019-01-01
• Subjects: Etching - Electrochemical -- electrochemical etching -- gallium nitride -- sub-bandgap absorption; Electrochemistry -- Periodicals; 541.3705
• DOI: 10.1149/2.0551912jes
• Languages: English
• ISSNs: 0013-4651

Abstract

Abstract : Anisotropic electrochemical etching of porous GaN structures by utilizing charge carriers generated by sub-bandgap absorption has been developed. Sub-bandgap light with a photon energy below the bandgap energy was transmitted through bulk GaN, but a certain type of photo-absorption additively occurred at the pore tip due to the Franz-Keldysh effect. The photocurrents observed when the reverse bias was applied to n-GaN were well reproduced by calculation taking into account the Frantz-Keldysh effect. The pore diameter was not changed that much, but the pore depth could be successfully controlled by the intensity and irradiation time of the sub-bandgap light.