1. Computational study of the CF4 /CHF3 / H2 /Cl2 /O2 /HBr gas phase plasma chemistry. (14th April 2016) Authors: Tinck, Stefan; Bogaerts, Annemie Journal: Journal of physics Issue: Volume 49:Number 19(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF6/O2 plasmas. Issue 9 (3rd April 2017) Authors: Tinck, Stefan; Tillocher, Thomas; Georgieva, Violeta; Dussart, Rémi; Neyts, Erik; Bogaerts, Annemie Journal: Plasma processes and polymers Issue: Volume 14:Issue 9(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Cryogenic etching of silicon with SF6 inductively coupled plasmas: a combined modelling and experimental study. (22nd April 2015) Authors: Tinck, Stefan; Tillocher, Thomas; Dussart, Rémi; Bogaerts, Annemie Journal: Journal of physics Issue: Volume 48:Number 15(2015) Page Start: 8 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Cryogenic etching of silicon with SF6 inductively coupled plasmas: a combined modelling and experimental study. (25th March 2015) Authors: Tinck, Stefan; Tillocher, Thomas; Dussart, Rémi; Bogaerts, Annemie Journal: Journal of physics Issue: Volume 48:Number 15(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Elucidating the effects of gas flow rate on an SF6 inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation. (24th August 2016) Authors: Tinck, Stefan; Tillocher, Thomas; Dussart, Rémi; Neyts, Erik C; Bogaerts, Annemie Journal: Journal of physics Issue: Volume 49:Number 38(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Formation of a Nanoscale SiO2 Capping Layer on Photoresist Lines with an Ar/SiCl4/O2 Inductively Coupled Plasma: A Modeling Investigation. Issue 1 (18th November 2013) Authors: Tinck, Stefan; Altamirano‐Sánchez, Efrain; De Schepper, Peter; Bogaerts, Annemie Journal: Plasma processes and polymers Issue: Volume 11:Issue 1(2014:Jan.) Page Start: 52 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Numerical Investigation of SiO2 Coating Deposition in Wafer Processing Reactors with SiCl4/O2/Ar Inductively Coupled Plasmas. Issue 8 (28th May 2013) Authors: Tinck, Stefan; De Schepper, Peter; Bogaerts, Annemie Journal: Plasma processes and polymers Issue: Volume 10:Issue 8(2013:Aug.) Page Start: 714 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?. (1st June 2017) Authors: Ishikawa, Kenji; Karahashi, Kazuhiro; Ichiki, Takanori; Chang, Jane P.; George, Steven M.; Kessels, W. M. M.; Lee, Hae June; Tinck, Stefan; Um, Jung Hwan; Kinoshita, Keizo Journal: Japanese journal of applied physics Issue: Volume 56:Number 6(2017)Supplement 2 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Role of vibrationally excited HBr in a HBr/He inductively coupled plasma used for etching of silicon. (17th May 2016) Authors: Tinck, Stefan; Bogaerts, Annemie Journal: Journal of physics Issue: Volume 49:Number 24(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗