Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF6/O2 plasmas. Issue 9 (3rd April 2017)

• Record Type: Journal Article
• Authors: Tinck, Stefan; Tillocher, Thomas; Georgieva, Violeta; Dussart, Rémi; Neyts, Erik; Bogaerts, Annemie
• Is Part Of: Plasma processes and polymers. Volume 14:Issue 9(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-04-03
• Subjects: cryogenic -- etching -- plasma -- SF6 -- silicon; Plasma polymerization -- Periodicals; Plasma-enhanced chemical vapor deposition -- Periodicals; Plasma chemistry -- Periodicals
• DOI: 10.1002/ppap.201700018
• Languages: English
• ISSNs: 1612-8850

Abstract

Abstract : Cryogenic plasma etching is a promising technique for high‐control wafer development with limited plasma induced damage. Cryogenic wafer temperatures effectively reduce surface damage during etching, but the fundamental mechanism is not well understood. In this study, the influences of wafer temperature, gas mixture and substrate bias on the (cryogenic) etch rates of Si with SF6 /O2 inductively coupled plasmas are experimentally and computationally investigated. The etch rates are measured in situ with double‐point reflectometry and a hybrid computational Monte Carlo – fluid model is applied to calculate plasma properties. This work allows the reader to obtain a better insight in the effects of wafer temperature on the etch rate and to find operating conditions for successful anisotropic (cryo)etching. Abstract : The concurrent influences of wafer temperature, gas mixture, and substrate bias on the cryogenic etch rates of Si with SF6 /O2 inductively coupled plasmas are experimentally and computationally investigated. This work provides proper operating conditions for successful anisotropic cryoetching as applied in the microelectronics industry, focusing on wafer temperature dependent etching.