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You searched for: Author/Creator Teramura, Shohei

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1. AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate. (27th April 2021)

2. Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length. (14th June 2021)

4. Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers. (31st March 2020)

5. High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing. Issue 14 (4th February 2020)

6. Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping. (29th June 2020)

7. Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure. (3rd September 2021)