Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN. (1st May 2022)

• Record Type: Journal Article
• Authors: Shojiki, Kanako; Shimokawa, Moe; Iwayama, Sho; Omori, Tomoya; Teramura, Shohei; Yamaguchi, Akihiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Miyake, Hideto
• Is Part Of: Applied physics express. Volume 15:Number 5(2022)
• Publication Date: 2022-05-01
• Subjects: laser lift-off -- AlGaN -- nano-patterned AlN -- vertical device; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac6567
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: The centimeter-scale laser lift-off (LLO) of a UVB laser diode structure on nano-patterned AlN was demonstrated by using a 257 nm pulsed laser. The mechanism of this LLO, which can be used for vertical light-emitting device fabrications, was analyzed in detail from the structural and optical properties. The large-area high-yield LLO without cracks was found to be enabled by taking advantage of the intentional in-plane periodic and nanometer-scale inhomogeneous distribution of the AlN molar fraction in the AlGaN layer introduced by growing AlGaN on nano-patterned AlN.