1. Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using an embedded TiN-source/drain structure. (24th January 2017) Authors: Nagatomi, Y; Tateyama, T; Tanaka, S; Yamamoto, K; Wang, D; Nakashima, H Journal: Semiconductor science and technology Issue: Volume 32:Number 3(2017:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗