1. GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure. Issue 8 (26th May 2017) Authors: Zhang, Lingxia; Tang, Shaoji; Wu, Hualong; Wang, Hailong; Wu, Zhisheng; Jiang, Hao Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗