1. Fabrication and characterizations of phosphorus‐doped n‐type BaSi2 epitaxial films grown by molecular beam epitaxy. Issue 12 (4th November 2013) Authors: Takabe, R.; Baba, M.; Nakamura, K.; Du, W.; Khan, M. A.; Koike, S.; Toko, K.; Hara, K. O.; Usami, N.; Suemasu, T.; Maeda, Yoshihito; Suzuki, Motofumi Journal: Physica status solidi Issue: Volume 10:Issue 12(2013:Dec.) Page Start: 1753 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗