Fabrication and characterizations of phosphorus‐doped n‐type BaSi2 epitaxial films grown by molecular beam epitaxy. Issue 12 (4th November 2013)

• Record Type: Journal Article
• Authors: Takabe, R.; Baba, M.; Nakamura, K.; Du, W.; Khan, M. A.; Koike, S.; Toko, K.; Hara, K. O.; Usami, N.; Suemasu, T.; Maeda, Yoshihito; Suzuki, Motofumi
• Is Part Of: Physica status solidi. Volume 10:Issue 12(2013:Dec.)
• Page Start: 1753
• Page End: 1755
• Publication Date: 2013-11-04
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300326
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Phosphorus (P)‐doped BaSi₂ films were grown by molecular beam epitaxy. P‐doped BaSi₂ showed <italic>n</italic> ‐type conductivity and the electron concentration increased up to 4×10¹⁷ cm^–3 at room temperature. The temperature dependence of electron concentration revealed that the activation energy was approximately 80 meV. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>