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Author/Creator Szerling, Anna

3. Selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs. (February 2021)

Authors:
Taube, Andrzej; Kamiński, Maciej; Ekielski, Marek; Kruszka, Renata; Jankowska-Śliwińska, Joanna; Michałowski, Paweł P.; Zdunek, Joanna; Szerling, Anna
Journal:
Materials science in semiconductor processing
Issue:
Volume 122(2021)
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Record Type:
Journal Article
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4. The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures. (1st June 2021)

Authors:
Pągowska, Karolina; Kozubal, Maciej; Taube, Andrzej; Kruszka, Renata; Kamiński, Maciej; Kwietniewski, Norbert; Juchniewicz, Marcin; Szerling, Anna
Journal:
Materials science in semiconductor processing
Issue:
Volume 127(2021)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗