Author/Creator: Suo, Hiromasa - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Suo, Hiromasa

1. Corrigendum: "Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC" [Jpn. J. Appl. Phys. 57, 065501 (2018)]. (6th November 2018)

Authors:: Suo, Hiromasa; Tsukimoto, Susumu; Eto, Kazuma; Osawa, Hiroshi; Kato, Tomohisa; Okumura, Hajime
Journal:: Japanese journal of applied physics
Issue:: Volume 58:Number 1(2019)
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Record Type:: Journal Article
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2. Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate. (8th January 2019)

Authors:: Suo, Hiromasa; Yamashita, Tamotsu; Eto, Kazuma; Osawa, Hiroshi; Kato, Tomohisa; Okumura, Hajime
Journal:: Japanese journal of applied physics
Issue:: Volume 58:Number 2(2019)
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Record Type:: Journal Article
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3. Photoluminescence wavelength from stacking fault with complicated structure in 4H-SiC epitaxial layer. (1st October 2022)

Authors:: Suo, Hiromasa; Yamashita, Tamotsu; Eto, Kazuma; Miyasaka, Akira; Osawa, Hiroshi; Kato, Tomohisa; Okumura, Hajime
Journal:: Japanese journal of applied physics
Issue:: Volume 61:Number 10(2022)
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Record Type:: Journal Article
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4. Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography. (1st August 2020)

Authors:: Fujie, Fumihiro; Harada, Shunta; Hanada, Kenji; Suo, Hiromasa; Koizumi, Haruhiko; Kato, Tomohisa; Tagawa, Miho; Ujihara, Toru
Journal:: Acta materialia
Issue:: Volume 194(2020)
Page Start:: 387
Record Type:: Journal Article
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