Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate. (8th January 2019)

• Record Type: Journal Article
• Authors: Suo, Hiromasa; Yamashita, Tamotsu; Eto, Kazuma; Osawa, Hiroshi; Kato, Tomohisa; Okumura, Hajime
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 2(2019)
• Publication Date: 2019-01-08
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/aaf3ac
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We investigated the formation of double Shockley-type stacking fault (DSF) and other types of stacking fault (SF) during a process of epitaxial growth by chemical vapor deposition on a highly nitrogen-doped 4H-SiC substrate. By comparing the bulk substrate before epitaxial growth and the substrate after growth with an epitaxial layer, bar-shaped SFs turned out to have formed during the process of epitaxial growth on the highly nitrogen-doped substrate. These bar-shaped SFs were identified to be DSFs and triple Shockley-type stacking faults by scanning transmission electron microscopy.