1. A homogeneous p–n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices. Issue 28 (9th July 2019) Authors: Zheng, Xiaoming; Wei, Yuehua; Liu, Jinxin; Wang, Shitan; Shi, Jiao; Yang, Hang; Peng, Gang; Deng, Chuyun; Luo, Wei; Zhao, Yuan; Li, Youzhen; Sun, Kuanglv; Wan, Wen; Xie, Haipeng; Gao, Yongli; Zhang, Xueao; Huang, Han Journal: Nanoscale Issue: Volume 11:Issue 28(2019) Page Start: 13469 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗