A homogeneous p–n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices. Issue 28 (9th July 2019)

• Record Type: Journal Article
• Authors: Zheng, Xiaoming; Wei, Yuehua; Liu, Jinxin; Wang, Shitan; Shi, Jiao; Yang, Hang; Peng, Gang; Deng, Chuyun; Luo, Wei; Zhao, Yuan; Li, Youzhen; Sun, Kuanglv; Wan, Wen; Xie, Haipeng; Gao, Yongli; Zhang, Xueao; Huang, Han
• Is Part Of: Nanoscale. Volume 11:Issue 28(2019)
• Page Start: 13469
• Page End: 13476
• Publication Date: 2019-07-09
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c9nr04212a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : We demonstrate the formation of MoSe2 p–n homojunction via partial modification, which shows good photo response. Abstract : The realization of p–n homojunctions, which can be achieved via spatially controlled carrier-type modulation, remains a challenge for two-dimensional transition metal dichalcogenides. Here, we report an effective method to tune intrinsic n-type few-layer MoSe2 to p-type through controlling precisely the ultraviolet-ozone treatment time, which can be attributed to the surface charge transfer from the underlying MoSe2 to MoO x ( x < 3). The resulting hole mobility and concentration are ∼20.1 cm 2 V −1 s −1 and ∼1.9 × 10 12 cm −2, respectively, and the on–off ratio is ∼10 5, which are comparable to the values of pristine n-type MoSe2 . Moreover, the lateral p–n homojunction prepared by partially treating MoSe2 displays a high rectification ratio of 2.4 × 10 4, an ideality factor of 1.1, and a high photoresponsivity of 0.23 A W −1 to the 633 nm laser at V d = 0 V and V g = 0 V due to the built-in potential in the p–n homojunction area. Our findings ensure the MoSe2 p–n diode as a promising candidate for future low-power operating photodevices.