1. III–V nanowire backward diodes with high sensitivity above 1 MV W−1 for low-power microwave energy harvesting. (9th February 2021) Authors: Takahashi, Tsuyoshi; Kawaguchi, Kenichi; Sato, Masaru; Suhara, Michihiko; Okamoto, Naoya Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Improvement in Uniformity of Type-II p-GaAsSb/n-InAs Nanowires on GaAs Substrates by the Insertion of GaAs Segments in Position-controlled VLS Method. (6th February 2019) Authors: Kawaguchi, Kenichi; Takahashi, Tsuyoshi; Okamoto, Naoya; Sato, Masaru; Suhara, Michihiko Journal: MRS advances Issue: Volume 4:Number 5/6(2019) Page Start: 331 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition. (2nd September 2019) Authors: Takahashi, Tsuyoshi; Kawaguchi, Kenichi; Sato, Masaru; Okamoto, Naoya; Suhara, Michihiko Journal: Applied physics express Issue: Volume 12:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗