Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition. (2nd September 2019)

• Record Type: Journal Article
• Authors: Takahashi, Tsuyoshi; Kawaguchi, Kenichi; Sato, Masaru; Okamoto, Naoya; Suhara, Michihiko
• Is Part Of: Applied physics express. Volume 12:Number 10(2019)
• Publication Date: 2019-09-02
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab3cc6
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Zero-bias nanowire backward diodes (NW BWD) were fabricated, and RF-DC conversion properties were investigated at 2.4 GHz. Type-II p-GaAs0.6 Sb0.4 /n-InAs NW BWDs were grown on a GaAs(111)B substrate by adopting the vapor–liquid–solid growth method. The I–V relationship displayed a large nonlinear characteristic typical to BWDs. Multi-NW BWDs indicated appropriate detected voltages when a microwave input signal of 2.4 GHz and less than 1 μ W was applied across them. Impedance-matched voltage sensitivities of 3.4 and 2.9 kV W −1 were obtained for 96- and 730-NW-array diodes; these values were comparable to those of well-designed Schottky diodes.