Author/Creator: Su, Yongbo - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Su, Yongbo

1. A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology. (August 2017)

Authors:: Wang, Xi; Zhang, Bichan; Zhao, Hua; Su, Yongbo; Muhammad, Asif; Guo, Dong; Jin, Zhi
Journal:: Journal of semiconductors
Issue:: Volume 38:Number 8(2017:Aug.)
Page Start:
Record Type:: Journal Article
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2. A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs. Issue 7 (26th March 2020)

Authors:: Ding, Wuchang; Ding, Peng; Su, Yongbo; Zhou, Jingtao; Yang, Feng; Hu, Jun; Peng, Songang; Shi, Jingyuan; Zhang, Dayong; Jin, Zhi
Journal:: International journal of RF and microwave computer-aided engineering
Issue:: Volume 30:Issue 7(2020)
Page Start:: n/a
Record Type:: Journal Article
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3. Analysis and design of a stacked power amplifier with 196% fractional bandwidth using equivalent circuit model. Issue 5 (28th January 2020)

Authors:: Hu, Jun; Wang, Xi; Li, Shaojun; Asif, Muhammad; Ding, Peng; Su, Yongbo; Ding, Wuchang; Yang, Feng; Chen, Xiaojuan; Jin, Zhi
Journal:: International journal of RF and microwave computer-aided engineering
Issue:: Volume 30:Issue 5(2020)
Page Start:: n/a
Record Type:: Journal Article
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4. Dynamic security assessment and the countermeasures analysis of land ecology in Henan province from 2007 to 2017. Issue 56 (10th October 2019)

Authors:: Su, Yongbo
Journal:: RSC advances
Issue:: Volume 9:Issue 56(2019)
Page Start:: 32414
Record Type:: Journal Article
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5. Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance. (September 2016)

Authors:: Ding, Peng; Chen, Chen; Ding, Wuchang; Yang, Feng; Su, Yongbo; Wang, Dahai; Jin, Zhi
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 1
Record Type:: Journal Article
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6. Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance. (September 2016)

Authors:: Ding, Peng; Chen, Chen; Ding, Wuchang; Yang, Feng; Su, Yongbo; Wang, Dahai; Jin, Zhi
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 1
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗