1. Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration. (8th September 2020) Authors: Loo, Roger; Jourdain, Anne; Rengo, Gianluca; Porret, Clement; Hikavyy, Andriy Yakovitch; Liebens, Maarten; Becker, Lucas; Storck, Peter; Beyer, Gerald; Beyne, Eric Journal: ECS transactions Issue: Volume 98:Number 4(2020) Page Start: 157 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗