1. Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. (November 2017) Authors: Chvála, Aleš; Marek, Juraj; Príbytný, Patrik; Šatka, Alexander; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Donoval, Daniel Journal: Microelectronics and reliability Issue: Volume 78(2017) Page Start: 148 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. (January 2015) Authors: Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan Journal: Solid-state electronics Issue: Volume 103(2015) Page Start: 127 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs. (30th January 2020) Authors: Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Applied physics express Issue: Volume 13:Number 2(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Comparison of AlGaN/GaN MISHEMT powerbar designs. Issue 3 (7th February 2014) Authors: Stoffels, Steve; Ronchi, Nicoló; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 906 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers. Issue 5 (2nd May 2016) Authors: Hu, Jie; Stoffels, Steve; Lenci, Silvia; You, Shuzhen; Bakeroot, Benoit; Ronchi, Nicolò; Venegas, Rafael; Groeseneken, Guido; Decoutere, Stefaan Journal: Physica status solidi Issue: Volume 213:Issue 5(2016:May) Page Start: 1229 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Leakage‐current reduction and improved on‐state performance of Au‐free AlGaN/GaN‐on‐Si Schottky diode by embedding the edge terminations in the anode region. Issue 3 (28th January 2014) Authors: Hu, Jie; Lenci, Silvia; Stoffels, Steve; Jaeger, Brice De; Groeseneken, Guido; Decoutere, Stefaan Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 862 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices. (5th February 2020) Authors: Borga, Matteo; Mukherjee, Kalparupa; De Santi, Carlo; Stoffels, Steve; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Applied physics express Issue: Volume 13:Number 2(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. (September 2016) Authors: Rossetto, Isabella; Meneghini, Matteo; Rizzato, Vanessa; Ruzzarin, Maria; Favaron, Andrea; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 547 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. (September 2016) Authors: Rossetto, Isabella; Meneghini, Matteo; Rizzato, Vanessa; Ruzzarin, Maria; Favaron, Andrea; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 547 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. (March 2016) Authors: Meneghesso, Gaudenzio; Meneghini, Matteo; Bisi, Davide; Rossetto, Isabella; Wu, Tian-Li; Van Hove, Marleen; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan; Zanoni, Enrico Journal: Microelectronics and reliability Issue: Volume 58(2016) Page Start: 151 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗