Author/Creator: Stoffels, S. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Stoffels, S.

1. Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation. (November 2015)

Authors:: Marino, F.A.; Bisi, D.; Meneghini, M.; Verzellesi, G.; Zanoni, E.; Van Hove, M.; You, S.; Decoutere, S.; Marcon, D.; Stoffels, S.; Ronchi, N.; Meneghesso, G.
Journal:: Solid-state electronics
Issue:: Volume 113(2015)
Page Start:: 9
Record Type:: Journal Article
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2. Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal–oxide semiconductor compatible process. (17th September 2018)

Authors:: Stoffels, S.; Geens, K.; Li, X.; Wellekens, D.; You, S.; Zhao, M.; Borga, M.; Zanoni, E.; Meneghesso, G.; Meneghini, M.; Posthuma, N.E.; Van Hove, M.; Decoutere, S.
Journal:: MRS communications
Issue:: Volume 8:Number 4(2018)
Page Start:: 1387
Record Type:: Journal Article
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3. Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. (September 2017)

Authors:: Rossetto, I.; Meneghini, M.; Canato, E.; Barbato, M.; Stoffels, S.; Posthuma, N.; Decoutere, S.; Tallarico, A.N.; Meneghesso, G.; Zanoni, E.
Journal:: Microelectronics and reliability
Issue:: Volume 76/77(2017)
Page Start:: 298
Record Type:: Journal Article
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4. Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. (September 2018)

Authors:: Borga, M.; Meneghini, M.; Stoffels, S.; Van Hove, M.; Zhao, M.; Li, X.; Decoutere, S.; Zanoni, E.; Meneghesso, G.
Journal:: Microelectronics and reliability
Issue:: Volume 88/90(2018)
Page Start:: 584
Record Type:: Journal Article
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5. Optimization of the source field‐plate design for low dynamic RDS‐ON dispersion of AlGaN/GaN MIS‐HEMTs. Issue 3 (31st January 2017)

Authors:: Ronchi, N.; Bakeroot, B.; You, S.; Hu, J.; Stoffels, S.; Wu, T.‐L.; De Jaeger, B.; Decoutere, S.
Journal:: Physica status solidi
Issue:: Volume 214:Issue 3(2017)
Page Start:: n/a
Record Type:: Journal Article
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