11. Intrinsic point defects in buckled and puckered arsenene: a first-principles study. Issue 15 (29th March 2017) Authors: Iordanidou, K.; Kioseoglou, J.; Afanas'ev, V. V.; Stesmans, A.; Houssa, M. Journal: Physical chemistry chemical physics Issue: Volume 19:Issue 15(2017) Page Start: 9862 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. Multi‐frequency electron spin resonance study of inherent Si dangling bond defects at the thermal (211)Si/SiO2 interface. Issue 11 (8th August 2014) Authors: Iacovo, S.; Stesmans, A.; Pizzini, Sergio; Kissinger, Gudrun Journal: Physica status solidi Issue: Volume 11:Issue 11/12(2014) Page Start: 1589 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. Oxygen and hydroxyl adsorption on MS2 (M = Mo, W, Hf) monolayers: a first‐principles molecular dynamics study. Issue 11 (13th September 2016) Authors: Iordanidou, K.; Houssa, M.; Pourtois, G.; Afanas'ev, V. V.; Stesmans, A. Journal: Physica status solidi Issue: Volume 10:Issue 11(2016) Page Start: 787 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. Processing‐induced near‐interfacial thermal donor generation in (100)Si/Si‐oxycarbide insulator structures revealed by electron spin resonance. Issue 11 (17th September 2014) Authors: Iacovo, S.; Stesmans, A.; Nguyen, S.; Afanas'ev, V. V.; Pizzini, Sergio; Kissinger, Gudrun Journal: Physica status solidi Issue: Volume 11:Issue 11/12(2014) Page Start: 1574 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy. (1st January 2016) Authors: Madia, O.; Afanas'ev, V. V.; Cott, D.; Arimura, H.; Schulte-Braucks, C.; Lin, H. C.; Buca, D.; Driesch, N. Von Den; Nyns, L.; Ivanov, T.; Cuypers, D.; Stesmans, A. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 4(2016) Page Start: P3031 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy. (24th November 2015) Authors: Madia, O.; Afanas'ev, V. V.; Cott, D.; Arimura, H.; Schulte-Braucks, C.; Lin, H. C.; Buca, D.; Driesch, N. Von Den; Nyns, L.; Ivanov, T.; Cuypers, D.; Stesmans, A. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 4(2016) Page Start: P3031 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. Structural and electronic rearrangement in ovonic switching GexSe1-x(0, 4 ≤ x ≤ 0, 72) films. (December 2021) Authors: Konashuk, A.S.; Filatova, E.O.; Sokolov, A.A.; Afanas'ev, V.V.; Houssa, M.; Stesmans, A. Journal: Solid-state electronics Issue: Volume 186(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. Valence Band Profile in Two-Dimensional Silicon-Oxygen Superlattices Probed by Internal Photoemission. (18th June 2016) Authors: Kolomiiets, N. M.; Afanas'ev, V. V.; Jayachandran, S.; Delabie, A.; Heyns, M.; Stesmans, A. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 11(2016) Page Start: Q3008 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. Valence Band Profile in Two-Dimensional Silicon-Oxygen Superlattices Probed by Internal Photoemission. (1st January 2016) Authors: Kolomiiets, N. M.; Afanas'ev, V. V.; Jayachandran, S.; Delabie, A.; Heyns, M.; Stesmans, A. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 11(2016) Page Start: Q3008 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗