1. A Deep Level Transient Spectroscopy Study of Hole Traps in GexSe1−x-based Layers for Ovonic Threshold Switching Selectors. (1st May 2020) Authors: Hsu, P.-C.; Simoen, E.; Lin, D.; Stesmans, A.; Goux, L.; Delhougne, R.; Carolan, P.; Bender, H.; Kar, G. S. Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 4(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation. (7th April 2020) Authors: Schoenaers, B.; Leonhardt, A.; Mehta, A. N.; Stesmans, A.; Chiappe, D.; Asselberghs, I.; Radu, I.; Huyghebaert, C.; De Gendt, S.; Houssa, M.; Afanas'ev, V. V. Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 9(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Band alignment and effective work function of atomic‐layer deposited VO2 and V2O5 films on SiO2 and Al2O3. Issue 1 (20th November 2014) Authors: Cerbu, F.; Chou, H.‐S.; Radu, I. P.; Martens, K.; Peter, A. P.; Afanas'ev, V. V.; Stesmans, A. Journal: Physica status solidi Issue: Volume 12:Issue 1/2(2015) Page Start: 238 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1−x/SiO2 heterostructures investigated by positron annihilation spectroscopy. Issue 11 (24th September 2014) Authors: Madia, O.; Segercrantz, N.; Afanas'ev, V.; Stesmans, A.; Souriau, L.; Slotte, J.; Tuomisto, F. Journal: Physica status solidi Issue: Volume 251:Issue 11(2014:Nov.) Page Start: 2211 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Current–voltage characteristics of armchair Sn nanoribbons. Issue 11 (25th September 2014) Authors: van den Broek, B.; Houssa, M.; Pourtois, G.; Afanas'ev, V. V.; Stesmans, A. Journal: Physica status solidi Issue: Volume 8:Issue 11(2014:Nov.) Page Start: 931 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices. Issue 2 (7th January 2016) Authors: Cerbu, F.; Andreev, D. V.; Lisoni, J.; Breuil, L.; Afanas'ev, V. V.; Stesmans, A.; Houssa, M. Journal: Physica status solidi Issue: Volume 213:Issue 2(2016:Feb.) Page Start: 265 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. First-principles investigation of defects at GaAs/oxide interfaces. (February 2016) Authors: Houssa, M.; Iordanidou, K.; Afanas'ev, V.V.; Stesmans, A. Journal: Materials science in semiconductor processing Issue: Volume 42:Part 2(2016:Feb.) Page Start: 239 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging. Issue 11 (6th October 2014) Authors: Cerbu, F.; Nguyen, A. P. D.; Kepa, J.; Afanas'ev, V. V.; Stesmans, A. Journal: Physica status solidi Issue: Volume 251:Issue 11(2014:Nov.) Page Start: 2193 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Impact of Point Defects and Oxidation on the Electronic Properties of HfS2 Monolayers. (10th August 2016) Authors: Iordanidou, K.; Houssa, M.; Pourtois, G.; Afanas'ev, V. V.; Stesmans, A. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 11(2016) Page Start: Q3054 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Impact of Point Defects and Oxidation on the Electronic Properties of HfS2 Monolayers. (1st January 2016) Authors: Iordanidou, K.; Houssa, M.; Pourtois, G.; Afanas'ev, V. V.; Stesmans, A. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 11(2016) Page Start: Q3054 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗