1. Analysis and optimization of read/write reliability for 12F2 cross-point ultra-fast phase change memory. (9th October 2019) Authors: Li, Yang; Chen, Yi-Feng; Cai, Dao-Lin; Lu, Yao-Yao; Wu, Lei; Liu, Yuan-Guang; Yan, Shuai; Lu, Jun-Jie; Yu, Li; Song, Zhi-Tang Journal: Semiconductor science and technology Issue: Volume 34:Number 11(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application*Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA09020402, the National Key Basic Research Program of China under Grant Nos 2013CBA01900, 2010CB934300, 2011CBA00607 and 2011CB932804, the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003, the National Natural Science Foundation of China under Grant Nos 61176122, 61106001, 61261160500 and 61376006, the Science and Technology Council of Shanghai under Grant Nos 12nm0503701, 12QA1403900, 13ZR1447200 and 13DZ2295700. (July 2015) Authors: Zhu, Yue-Qin; Zhang, Zhong-Hua; Song, San-Nian; Xie, Hua-Qing; Song, Zhi-Tang; Shen, Lan-Lan; Li, Le; Wu, Liang-Cai; Liu, Bo Journal: Chinese physics letters Issue: Volume 32:Number 7(2015:Jul.) Page Start: 1450 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire*Supported by the National Major Scientific and Technological Special Project during the Twelfth Five-year Plan Period under Grant No 2011ZX02704, the National Natural Science Foundation of China under Grant No 51205387, and the Science and Technology Commission of Shanghai under Grant Nos 11nm0500300 and 14XD1425300. (August 2015) Authors: Yan, Wei-Xia; Zhang, Ze-Fang; Guo, Xiao-Hui; Liu, Wei-Li; Song, Zhi-Tang Journal: Chinese physics letters Issue: Volume 32:Number 8(2015:Aug.) Page Start: 85 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Endurance Improvement of Phase Change Memory Based on High and Narrow RESET Currents. (28th February 2020) Authors: Wu, Lei; Cai, Dao-Lin; Chen, Yi-Feng; Lu, Yao-Yao; Liu, Yuan-Guang; Zhang, Si-Fan; Yan, Shuai; Li, Yang; Yu, Li; Lu, Junjie; Song, Zhi-Tang Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 3(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Fast switching and low drift of TiSbTe thin films for phase change memory applications. (1st March 2019) Authors: Liu, Yuan-Guang; Chen, Yi-Feng; Cai, Dao-Lin; Lu, Yao-Yao; Wu, Lei; Yan, Shuai; Li, Yang; Song, Zhi-Tang Journal: Materials science in semiconductor processing Issue: Volume 91(2019) Page Start: 399 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. High performance of multilevel-cell phase change memory device with good endurance reliability. (17th September 2019) Authors: Liu, Yuan-Guang; Chen, Yi-Feng; Cai, Dao-Lin; Lu, Yao-Yao; Wu, Lei; Yan, Shuai; Li, Yang; Lu, Jun-Jie; Yu, Li; Song, Zhi-Tang Journal: Semiconductor science and technology Issue: Volume 34:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Investigation of the effect of blade electrode width on performance of phase change memory. (31st August 2021) Authors: Cui, Zi-Jing; Cai, Dao-Lin; Li, Yang; Li, Cheng-Xing; Ling, Yun; Song, Zhi-Tang Journal: Semiconductor science and technology Issue: Volume 36:Number 10(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Optimization of driving current and crosstalk effect in epitaxial diode array for phase change memory application. (22nd September 2020) Authors: Li, Yang; Cai, Dao-Lin; Chen, Yi-Feng; Wu, Lei; Liu, Yuan-Guang; Yan, Shuai; Yu, Li; Liu, Wei-Li; Song, Zhi-Tang Journal: Semiconductor science and technology Issue: Volume 35:Number 11(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. RESET current optimization for phase change memory based on the sub-threshold slope. (July 2019) Authors: Wu, Lei; Chen, Yi-Feng; Cai, Dao-Lin; Lu, Yao-Yao; Guo, Tian-qi; Liu, Yuan-Guang; Chen, Xin; Zhang, Si-Fan; Yan, Shuai; Li, Yang; Song, Zhi-Tang Journal: Materials science in semiconductor processing Issue: Volume 97(2019) Page Start: 11 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. The Influence of the Bitline Length on the Resistance Consistency in Phase Change Memory Array. (1st January 2018) Authors: Lu, Yao-Yao; Cai, Dao-Lin; Chen, Yi-Feng; Lei, Yu; Yan, Shuai; Wu, Lei; Liu, Yuan-Guang; Li, Yang; Song, Zhi-Tang Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 3(2018) Page Start: Q33 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗