1. Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition. Issue 12 (4th May 2020) Authors: Kwak, Taemyung; Lee, Jonggun; Yoo, Geunho; Shin, Heejin; Choi, Uiho; So, Byeongchan; Kim, Seongwoo; Nam, Okhyun Other Names: Lee Cheon guestEditor.; Choi Ji-Won guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 12(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comparison of MoS2/p‐GaN Heterostructures Fabricated via Direct Chemical Vapor Deposition and Transfer Method. Issue 7 (23rd December 2019) Authors: Lee, Juhun; Jang, Hyunwoo; Kwak, Taemyung; Choi, Uiho; So, Byeongchan; Nam, Okhyun Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire. Issue 7 (4th December 2019) Authors: Choi, Uiho; Kim, Hyun-Seop; Lee, Kyeongjae; Jung, Donghyeop; Kwak, Taemyung; Jang, Taehoon; Nam, Yongjun; So, Byeongchan; Kang, Myoung-Jin; Seo, Kwang-Seok; Han, Min; Choi, Seokgyu; Lee, Sangmin; Cha, Ho-Young; Nam, Okhyun Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Efficiency Improvement of Deep‐Ultraviolet Light Emitting Diodes with Gradient Electron Blocking Layers. Issue 10 (24th November 2017) Authors: So, Byeongchan; Kim, Jinwan; Shin, Eunyoung; Kwak, Taemyung; Kim, Taeyoung; Nam, Okhyun Other Names: Scholz Ferdinand guestEditor.; Schwarz Ulrich guestEditor.; Vescan Andrei guestEditor.; Wernicke Tim guestEditor. Journal: Physica status solidi Issue: Volume 215:Issue 10(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity. (March 2020) Authors: Lee, Juhun; Jang, Hyunwoo; Kwak, Taemyung; Choi, Uiho; So, Byeongchan; Nam, Okhyun Journal: Solid-state electronics Issue: Volume 165(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT. (6th November 2019) Authors: Choi, Uiho; Lee, Kyeongjae; Kwak, Taemyung; Jung, Donghyeop; Jang, Taehoon; Nam, Yongjun; So, Byeongchan; Kim, Hyun-Seop; Cha, Ho-Young; Kang, Myoung-Jin; Seo, Kwang-Seok; Nam, Okhyun Journal: Japanese journal of applied physics Issue: Volume 58:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers. Issue 62 (16th October 2018) Authors: So, Byeongchan; Kim, Jinwan; Kwak, Taemyung; Kim, Taeyoung; Lee, Joohyoung; Choi, Uiho; Nam, Okhyun Journal: RSC advances Issue: Volume 8:Issue 62(2018) Page Start: 35528 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate. (5th December 2016) Authors: Ko, Kwangse; Lee, Kyeongjae; So, Byeongchan; Heo, Cheon; Lee, Kyungbae; Kwak, Taemyung; Han, Sang-Woo; Cha, Ho-Young; Nam, Okhyun Journal: Japanese journal of applied physics Issue: Volume 56:Number 1(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor. Issue 7 (4th December 2019) Authors: Choi, Uiho; Jung, Donghyeop; Lee, Kyeongjae; Kwak, Taemyung; Jang, Taehoon; Nam, Yongjun; So, Byeongchan; Nam, Okhyun Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗