1. Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. (September 2018) Authors: Dammann, M.; Baeumler, M.; Brückner, P.; Kemmer, T.; Konstanzer, H.; Graff, A.; Simon-Najasek, M.; Quay, R. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 385 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. (September 2016) Authors: Broas, M.; Graff, A.; Simon-Najasek, M.; Poppitz, D.; Altmann, F.; Jung, H.; Blanck, H. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 541 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. (September 2016) Authors: Broas, M.; Graff, A.; Simon-Najasek, M.; Poppitz, D.; Altmann, F.; Jung, H.; Blanck, H. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 541 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy. (September 2016) Authors: Brand, S.; Simon-Najasek, M.; Kögel, M.; Jatzkowski, J.; Portius, R.; Altmann, F. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 341 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy. (September 2016) Authors: Brand, S.; Simon-Najasek, M.; Kögel, M.; Jatzkowski, J.; Portius, R.; Altmann, F. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 341 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. (September 2017) Authors: Graff, A.; Simon-Najasek, M.; Altmann, F.; Kuzmik, J.; Gregušová, D.; Haščík, Š.; Jung, H.; Baur, T.; Grünenpütt, J.; Blanck, H. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 338 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Local metal segregation as root cause for electrical shorts in highly doped pressure sensor devices. (November 2021) Authors: Simon-Najasek, M.; Diehle, P.; Große, Ch.; Hübner, S.; Brokmann, G.; Sprenger, B.; Altmann, F. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Non-invasive soft breakdown localisation in low k dielectrics using photon emission microscopy and thermal laser stimulation. (January 2019) Authors: Herfurth, N.; Wu, C.; Beyreuther, A.; Nakamura, T.; De Wolf, I.; Simon-Najasek, M.; Altmann, F.; Croes, K.; Boit, C. Journal: Microelectronics and reliability Issue: Volume 92(2019) Page Start: 73 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions. (September 2016) Authors: Simon-Najasek, M.; Lorenz, G.; Lindner, A.; Altmann, F. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 248 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions. (September 2016) Authors: Simon-Najasek, M.; Lorenz, G.; Lindner, A.; Altmann, F. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 248 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗