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Author/Creator Shutts, Samuel

1. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. (22nd October 2020)

Authors:
Yang, Junjie; Liu, Zizhuo; Jurczak, Pamela; Tang, Mingchu; Li, Keshuang; Pan, Shujie; Sanchez, Ana; Beanland, Richard; Zhang, Jin-Chuan; Wang, Huan; Liu, Fengqi; Li, Zhibo; Shutts, Samuel; Smowton, Peter; Chen, Siming; Seeds, Alwyn; Liu, Huiyun
Journal:
Journal of physics
Issue:
Volume 54:Number 3(2021)
Page Start:
Record Type:
Journal Article
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2. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. (22nd October 2020)

Authors:
Yang, Junjie; Liu, Zizhuo; Jurczak, Pamela; Tang, Mingchu; Li, Keshuang; Pan, Shujie; Sanchez, Ana; Beanland, Richard; Zhang, Jin-Chuan; Wang, Huan; Liu, Fengqi; Li, Zhibo; Shutts, Samuel; Smowton, Peter; Chen, Siming; Seeds, Alwyn; Liu, Huiyun
Journal:
Journal of physics
Issue:
Volume 54:Number 3(2021)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

5. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. (26th May 2022)

Authors:
Deng, Huiwen; Jarvis, Lydia; Li, Zhibo; Liu, Zizhuo; Tang, Mingchu; Li, Keshuang; Yang, Junjie; Maglio, Benjamin; Shutts, Samuel; Yu, Jiawang; Wang, Lingfang; Chen, Siming; Jin, Chaoyuan; Seeds, Alwyn; Liu, Huiyun; Smowton, Peter M
Journal:
Journal of physics
Issue:
Volume 55:Number 21(2022)
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Record Type:
Journal Article
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7. VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications. Issue 1 (11th November 2022)

Authors:
Baker, Jack; Allford, Craig. P.; Gillgrass, Sara.; Peach, Tomas.; Meiklejohn, James; Hentschel, Curtis; Meredith, Wyn; Powell, Denise; Sweet, Tracy; Haji, Mohsin; Davies, J. Iwan; Shutts, Samuel; Smowton, Peter M.
Journal:
IET optoelectronics
Issue:
Volume 17:Issue 1(2023)
Page Start:
24
Record Type:
Journal Article
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