The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. (26th May 2022)

• Record Type: Journal Article
• Authors: Deng, Huiwen; Jarvis, Lydia; Li, Zhibo; Liu, Zizhuo; Tang, Mingchu; Li, Keshuang; Yang, Junjie; Maglio, Benjamin; Shutts, Samuel; Yu, Jiawang; Wang, Lingfang; Chen, Siming; Jin, Chaoyuan; Seeds, Alwyn; Liu, Huiyun; Smowton, Peter M
• Is Part Of: Journal of physics. Volume 55:Number 21(2022)
• Publication Date: 2022-05-26
• Subjects: direct N-type doped -- P-type modulation doping -- InAs/GaAs QDs -- threshold current density; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ac55c4
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. In contrast, the p-type modulation-doped lasers have a reduced threshold current density for higher temperatures and for shorter lasers with cavity lengths of 1 mm and below.